2013-09-20 1 BFP540 1 2 3 4 low noise silicon bipolar rf transistor ? for highest gain and low noise amplifier ? outstanding g ms = 21.5 db at 1.8 ghz minimum noise figure nf min = 0.9 db at 1.8 ghz ? pb-free (rohs compliant) and halogen-free package with visible leads ? qualification report according to aec-q101 available esd ( e lectro s tatic d ischarge) sensitive device, observe handling precaution! type marking pin configuration package BFP540 ats 1=b 2=e 3=c 4=e - - sot343 maximum ratings at t a = 25 c, unless otherwise specified parameter symbol value unit collector-emitter voltage t a = 25 c t a = -55 c v ceo 4.5 4 v collector-emitter voltage v ces 14 collector-base voltage v cbo 14 emitter-base voltage v ebo 1 collector current i c 80 ma base current i b 8 total power dissipation 1) t s 77c p tot 250 mw junction temperature t j 150 c ambient temperature t a -65 ... 150 storage temperature t st g -65 ... 150 1 t s is measured on the emitter lead at the soldering point to the pcb
2013-09-20 2 BFP540 thermal resistance parameter symbol value unit junction - soldering point 1) r thjs 290 k/w electrical characteristics at t a = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics collector-emitter breakdown voltage i c = 1 ma, i b = 0 v (br)ceo 4.5 5 - v collector-emitter cutoff current v ce = 14 v, v be = 0 i ces - - 10 a collector-base cutoff current v cb = 5 v, i e = 0 i cbo - - 100 na emitter-base cutoff current v eb = 0.5 v, i c = 0 i ebo - - 10 a dc current gain i c = 20 ma, v ce = 3.5 v, pulse measured h fe 50 110 185 - 1 for the definition of r thjs please refer to application note an077 (thermal resistance calculation)
2013-09-20 3 BFP540 electrical characteristics at t a = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. ac characteristics (verified by random sampling) transition frequency i c = 50 ma, v ce = 4 v, f = 1 ghz f t 21 30 - ghz collector-base capacitance v cb = 2 v, f = 1 mhz, v be = 0 , emitter grounded c cb - 0.14 0.24 pf collector emitter capacitance v ce = 2 v, f = 1 mhz, v be = 0 , base grounded c ce - 0.33 - emitter-base capacitance v eb = 0.5 v, f = 1 mhz, v cb = 0 , collector grounded c eb - 0.65 - minimum noise figure i c = 5 ma, v ce = 2 v, f = 1.8 ghz, z s = z sopt i c = 5 ma, v ce = 2 v, f = 3 ghz, z s = z sopt nf min - - 0.9 1.3 1.4 - db power gain, maximum stable 1) i c = 20 ma, v ce = 2 v, z s = z sopt , z l = z lopt , f = 1.8 ghz g ms - 21.5 - db power gain, maximum available 1) i c = 20 ma, v ce = 2 v, z s = z sopt , z l = z lopt , f = 3 ghz g ma - 16 - db transducer gain i c = 20 ma, v ce = 2 v, z s = z l = 50 ? , f = 1.8 ghz f = 3 ghz | s 21e | 2 16 - 18.5 14.5 - - db third order intercept point at output 2) v ce = 2 v, i c = 20 ma, z s = z l =50 ? , f = 1 . 8 ghz ip3 - 24.5 - dbm 1db compression point at output i c = 20 ma, v ce = 2 v, z s = z l =50 ? , f = 1 . 8 ghz p -1db - 11 - 1 g ma = | s 21e / s 12e | (k-(k2-1) 1/2 ), g ms = | s 21e / s 12e | 2 ip3 value depends on termination of all intermodulation frequency components. termination used for this measurement is 50 ? from 0.1 mhz to 6 ghz
2013-09-20 4 BFP540 total power dissipation p tot = ? ( t s ) 0 20 40 60 80 100 120 c 150 t s 0 50 100 150 200 mw 300 p tot permissible pulse load r thjs = ? ( t p ) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 1 10 2 10 3 10 k/w r thjs 0.5 0.2 0.1 0.05 0.02 0.01 0.005 d = 0 permissible pulse load p totmax / p totdc = ? ( t p ) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 p totmax / p totdc d = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 collector-base capacitance c cb = ? ( v cb ) f = 1mhz 0 0.5 1 1.5 2 2.5 3 v 4 v cb 0 0.05 0.1 pf 0.2 c cb
2013-09-20 5 BFP540 third order intercept point ip 3 = ? ( i c ) (output, z s =z l =50 ? ) v ce = parameter, f = 1.8ghz 0 10 20 30 40 50 60 70 80 ma 100 i c 2 4 6 8 10 12 14 16 18 20 22 24 26 dbm 30 ip 3 1v 1.5v 2v 3v 4v transition frequency f t = ? ( i c ) f = 1ghz v ce = parameter in v 0 10 20 30 40 50 60 70 ma 90 i c 0 5 10 15 20 25 ghz 35 f t 0.5 1 1.5 2 3 4 power gain g ma , g ms = ? ( i c ) v ce = 2v f = parameter in ghz 0 10 20 30 40 50 60 70 ma 90 i c 0 5 10 15 20 db 30 g 1 2 3 4 5 6 power gain g ma , g ms = ? ( f ), | s 21 |2 = f (f) v ce = 2v, i c = 20ma 0 1 2 3 4 ghz 6 g 5 10 15 20 25 30 35 40 db 50 i c |s21|2 gms gma
2013-09-20 6 BFP540 power gain g ma , g ms = ? ( v ce ) i c = 20ma f = parameter in ghz 0 0.5 1 1.5 2 2.5 3 v 4 v ce 0 5 10 15 20 db 30 g 1 2 3 4 5 6 noise figure f = ? ( i c ) v ce = 2v, z s = z sopt 0 10 20 30 40 50 60 ma 80 i c 0 0.5 1 1.5 2 2.5 3 db 4 f f = 6ghz f = 5ghz f = 4ghz f = 3ghz f = 2.4ghz f = 1.8ghz f = 0.9ghz noise figure f = ? ( i c ) v ce = 2v, f = 1.8ghz 0 10 20 30 40 50 60 ma 80 i c 0 0.5 1 1.5 2 2.5 3 db 4 f zs = 50ohm zs = zsopt noise figure f = ? ( f ) v ce = 2v, z s = z sopt 0 1 2 3 4 ghz 6 f 0 0.5 1 1.5 2 db 3 f ic = 20ma ic = 5ma
2013-09-20 7 BFP540 source impedance for min. noise figure vs. frequency v ce = 2v, i c = 5ma / 20ma 100 +j10 -j10 50 +j25 -j25 25 +j50 -j50 10 +j100 -j100 0 0.9ghz 1.8ghz 2.4ghz 3ghz 4ghz 5ghz 6ghz 5ma 20ma
2013-09-20 8 BFP540 spice gp model for the spice gummel poon (gp) model as well as for the s-parameters (including noise parameters) please refer to our internet website www.infineon.com/rf.models . please consult our website and download the latest versions before actually starting your design. you find the BFP540 spice gp model in the internet in mwo- and ads-format, which you can import into these circuit simulation tools very quickly and conveniently. the model already contains the package parasitics and is ready to use for dc and high frequency simulations. the terminals of the model circuit correspond to the pin configuration of the device. the model parameters have been extracted and verified up to 10 ghz using typical devices. the BFP540 spice gp model reflects the typical dc- and rf-performance within the limitations which are given by the spice gp model itself. besides the dc characteristics all s-parameters in magnitude and phase, as well as noise figure (including optimum source impedance, equivalent noise resistance and flicker noise) and intermodulation have been extracted.
2013-09-20 9 BFP540 package sot343
2013-09-20 10 BFP540 edition 2009-11-16 published by infineon technologies ag 81726 munich, germany ? 2009 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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